APT25M100J

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APT25M100J

MOSFET N-CH 1000V 25A ISOTOP

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  • Mfr。パート #APT25M100J
  • パッケージ ISOTOP®
  • データシート
  • 在庫中3089

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仕様

Package Tube
Series POWER MOS 8™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1000 V
Current-ContinuousDrain(Id)@25°C 25A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 330mOhm @ 18A, 10V
Vgs(th)(Max)@Id 5V @ 2.5mA
GateCharge(Qg)(Max)@Vgs 305 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 9835 pF @ 25 V
PowerDissipation(Max) 545W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Chassis Mount
SupplierDevicePackage ISOTOP®

概要

Description

The APT25M100J is a specific type of power transistor, particularly a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), widely used in various electronic applications. Designed to handle high voltage and current, it is suitable for switching and amplification tasks in power management systems. The "25" in the name typically refers to the maximum drain current rating in amperes, while "100" indicates the maximum drain-source voltage in volts.
Key features often include low on-resistance, fast switching capabilities, and thermal stability, making it ideal for applications in power supplies, motor drivers, and automotive systems. The APT25M100J is valued for its efficiency and reliability, contributing to improved performance in electronic circuits.
Engineers and designers select this component for its robust performance in demanding environments, ensuring high efficiency and minimal energy loss. When integrating the APT25M100J into a circuit, attention to thermal management and proper drive circuitry is essential to optimize its performance.

Features

The APT25M100J is a high-performance, compact, and efficient power transistor primarily used in various electronic applications. Key features include:
1. Type: N-channel MOSFET, suitable for switching and amplification.
2. Voltage Rating: Typically up to 25V, allowing for versatile applications.
3. Current Rating: Can handle continuous drain current around 100A, making it suitable for high-power applications.
4. Low RDS(on): Offers low on-resistance for enhanced efficiency and reduced heat generation during operation.
5. Fast Switching Speed: Ideal for applications requiring quick turn-on and turn-off, such as power supplies and motor drives.
6. Thermal Performance: Designed to operate effectively under varying thermal conditions, ensuring reliability.
7. Package Type: Available in compact packages for space-constrained designs.
These features make the APT25M100J suitable for automotive, industrial, and consumer electronics applications. Always refer to the manufacturer's datasheet for specific electrical and thermal characteristics.

Package

The APT25M100J is packaged in a TO-247 form factor, which is a type of power semiconductor packaging designed for efficient heat dissipation and easy mounting on heat sinks.

Pinout

The APT25M100J is a high-performance N-channel MOSFET used primarily in power applications. It features a total of 6 pins.
Pin Functions:
1. Gate (G): Controls the switching of the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): The terminal where the load is connected. It carries the current when the MOSFET is conducting.
3. Source (S): The terminal connected to the ground or lower potential. It serves as the return path for current.
Pins may also include additional connections for thermal management or package-specific features, depending on the specific configuration. Always consult the manufacturer's datasheet for the most accurate and detailed information.

Manufacturer

The APT25M100J is manufactured by APT (Advanced Power Technology), a company specializing in power semiconductor devices. APT is known for producing a variety of products, including IGBTs (Insulated Gate Bipolar Transistors), MOSFETs, and diodes, commonly used in industrial and commercial applications such as power management, motor drives, and renewable energy systems. The company focuses on delivering innovative solutions for efficient power conversion and control in various sectors, including automotive, industrial, and consumer electronics.

Application

APT25M100J is a high-power IGBT (Insulated Gate Bipolar Transistor) used in various applications, including motor drives, renewable energy systems (like solar inverters), industrial automation, and power electronics. Its high efficiency and fast switching capabilities make it suitable for applications requiring reliable performance in energy conversion and control.

Equivalent

The APT25M100J is a high-voltage IGBT (Insulated Gate Bipolar Transistor) used for power switching applications. Equivalent products include the STGW25H120, IRG4PH50KD, and FGA25N120. Always verify specifications and compatibility for your specific application before substitution.

出荷

出荷方法私たち

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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