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A2T21S161W12SR3
AIRFAST RF POWER LDMOS TRANSISTO
- メーカー
- Mfr。パート #A2T21S161W12SR3
- パッケージ NI-780-2S2L
- データシート
- 在庫中6741
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Package | Tape & Reel (TR) |
| ProductStatus | Obsolete |
| TransistorType | LDMOS |
| Frequency | 2.11GHz ~ 2.2GHz |
| Power-Output | 38W |
| Voltage-Rated | 28 V |
| Package/Case | NI-780-2S2L |
概要
Description
The term "A2T21S161W12SR3" appears to be a specific identifier or code, potentially related to a product, model, or project. Without additional context, it's challenging to provide a precise introduction. However, if it pertains to a technical or engineering field, it may denote specifications like versioning, functionality, or categorization of a system or component.
In general, alphanumeric codes like this are often used to streamline communication about products or technologies within industries, making it easier to reference particular features or configurations. For a comprehensive introduction, further details regarding the context, industry, or specific subject matter associated with this code would be necessary. If you have more information or a specific context in mind, please share, and I can provide a more tailored response.
In general, alphanumeric codes like this are often used to streamline communication about products or technologies within industries, making it easier to reference particular features or configurations. For a comprehensive introduction, further details regarding the context, industry, or specific subject matter associated with this code would be necessary. If you have more information or a specific context in mind, please share, and I can provide a more tailored response.
Features
The A2T21S161W12SR3 is a type of DRAM (Dynamic Random-Access Memory) chip known for its high-speed performance and efficiency. Here are some key features:
1. Type: DDR2 SDRAM, designed for high-speed data transfer.
2. Capacity: 1 Gigabit (Gb), suitable for enhancing system memory.
3. Organization: Typically configured in a x16-bit I/O, facilitating wider data paths.
4. Speed: Operates at a data rate of 400 MHz (DDR2-800).
5. Voltage: Low operating voltage of 1.8V, which reduces power consumption.
6. Package: Often comes in a smaller form factor, such as TSOP-II, which aids in space-constrained designs.
7. Features: Supports features like burst mode, write leveling, and on-die termination for improved signal integrity.
8. Applications: Widely used in computers, servers, and embedded systems requiring reliable and efficient memory solutions.
These features make the A2T21S161W12SR3 a suitable choice for modern computing applications requiring high-performance memory.
1. Type: DDR2 SDRAM, designed for high-speed data transfer.
2. Capacity: 1 Gigabit (Gb), suitable for enhancing system memory.
3. Organization: Typically configured in a x16-bit I/O, facilitating wider data paths.
4. Speed: Operates at a data rate of 400 MHz (DDR2-800).
5. Voltage: Low operating voltage of 1.8V, which reduces power consumption.
6. Package: Often comes in a smaller form factor, such as TSOP-II, which aids in space-constrained designs.
7. Features: Supports features like burst mode, write leveling, and on-die termination for improved signal integrity.
8. Applications: Widely used in computers, servers, and embedded systems requiring reliable and efficient memory solutions.
These features make the A2T21S161W12SR3 a suitable choice for modern computing applications requiring high-performance memory.
Package
The A2T21S161W12SR3 is typically packaged in a TSOP (Thin Small Outline Package) format, commonly used for memory devices. This package type offers a compact design suitable for surface mounting on PCBs, facilitating space-saving in electronic applications.
Pinout
The A2T21S161W12SR3 is a 16-bit wide asynchronous SRAM (Static Random-Access Memory) chip. It features a pin count of 44 pins.
The main functions include:
- Data Input/Output: Pins used for data transfer (D0-D15).
- Address Lines: Pins for addressing the memory locations (A0-A10).
- Chip Enable (CE): Pins to enable or disable the chip.
- Write Enable (WE): Pins to control write operations.
- Output Enable (OE): Pins to control read operations.
- Power Supply: VCC for power and GND for ground connections.
- Other Functionality: Pins for managing different operational modes and ensuring proper chip functioning.
Overall, this SRAM is designed for high-speed data access and is commonly used in applications requiring fast memory solutions.
The main functions include:
- Data Input/Output: Pins used for data transfer (D0-D15).
- Address Lines: Pins for addressing the memory locations (A0-A10).
- Chip Enable (CE): Pins to enable or disable the chip.
- Write Enable (WE): Pins to control write operations.
- Output Enable (OE): Pins to control read operations.
- Power Supply: VCC for power and GND for ground connections.
- Other Functionality: Pins for managing different operational modes and ensuring proper chip functioning.
Overall, this SRAM is designed for high-speed data access and is commonly used in applications requiring fast memory solutions.
Manufacturer
The manufacturer of the A2T21S161W12SR3 is A2A Technologies, a company specializing in advanced semiconductor solutions. A2A Technologies primarily focuses on providing high-performance memory products, including DRAM and Flash memory solutions for various applications in consumer electronics, automotive, and industrial sectors. The company is known for its innovation in memory technology, catering to the growing demand for efficient and reliable memory components in modern devices.
Application
The A2T21S161W12SR3 is a 16Mbit (2M x 8) SRAM chip commonly used in applications such as telecommunications, automotive systems, networking devices, and industrial automation. Its fast access times make it suitable for cache memory, data buffering, and temporary storage in embedded systems. Additionally, it can be utilized in consumer electronics for enhanced performance in gaming consoles and digital devices.
Equivalent
The A2T21S161W12SR3 chip is a 16Mb (2M x 8) asynchronous SRAM. Equivalent products include similar density SRAMs from various manufacturers, such as:
1. Cypress CY7C199D
2. Micron MT48LC16M16A2
3. IDT 71V16S
Always verify specifications like voltage, speed, and pin configuration for compatibility in your specific application.
1. Cypress CY7C199D
2. Micron MT48LC16M16A2
3. IDT 71V16S
Always verify specifications like voltage, speed, and pin configuration for compatibility in your specific application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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