画像は参照用のみです。
2SK3557-7-TB-E
RF MOSFET N-CH JFET 5V 3CP
- メーカー
- Mfr。パート #2SK3557-7-TB-E
- パッケージ SC-59-3
- データシート
- 在庫中5302
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| TransistorType | N-Channel JFET |
| Frequency | 1kHz |
| Voltage-Test | 5 V |
| CurrentRating(Amps) | 50mA |
| NoiseFigure | 1dB |
| Current-Test | 1 mA |
| Voltage-Rated | 15 V |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
概要
Description
The 2SK3557-7-TB-E is a high-power N-channel MOSFET, commonly used in various electronic applications such as power amplifiers, switching power supplies, and motor control systems. It features low on-resistance and fast switching capabilities, making it suitable for high-efficiency designs.
Key specifications typically include a maximum drain-source voltage (V_DS) of around 30V, a continuous drain current (I_D) rating of up to 60A, and a low gate threshold voltage (V_GS(th)), which enhances its performance in low-voltage applications. The device is housed in a TO-220 package, facilitating efficient heat dissipation and ease of mounting on heatsinks.
The 2SK3557-7-TB-E is ideal for applications requiring reliable performance under high load conditions, and its characteristics make it a popular choice among engineers seeking robust solutions in power electronics. Always consult the specific datasheet for detailed electrical characteristics and application guidelines.
Key specifications typically include a maximum drain-source voltage (V_DS) of around 30V, a continuous drain current (I_D) rating of up to 60A, and a low gate threshold voltage (V_GS(th)), which enhances its performance in low-voltage applications. The device is housed in a TO-220 package, facilitating efficient heat dissipation and ease of mounting on heatsinks.
The 2SK3557-7-TB-E is ideal for applications requiring reliable performance under high load conditions, and its characteristics make it a popular choice among engineers seeking robust solutions in power electronics. Always consult the specific datasheet for detailed electrical characteristics and application guidelines.
Features
The 2SK3557-7-TB-E is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (Vds) typically around 60V.
2. Current Rating: Continuous drain current (Id) up to approximately 30A.
3. RDS(on): Low on-resistance (RDS(on)) for efficient operation, minimizing power loss.
4. Gate Threshold Voltage: Suitable threshold voltage for easy drive compatibility with low-voltage logic levels.
5. Package Type: Available in a TO-220 package for effective thermal management.
6. Fast Switching Speed: Enables high-frequency applications, making it suitable for power supply and motor control.
7. High Reliability: Designed for robust performance in various applications.
This MOSFET is commonly used in power management circuits, inverters, and other switching applications requiring high efficiency and reliability.
1. Voltage Rating: Maximum drain-source voltage (Vds) typically around 60V.
2. Current Rating: Continuous drain current (Id) up to approximately 30A.
3. RDS(on): Low on-resistance (RDS(on)) for efficient operation, minimizing power loss.
4. Gate Threshold Voltage: Suitable threshold voltage for easy drive compatibility with low-voltage logic levels.
5. Package Type: Available in a TO-220 package for effective thermal management.
6. Fast Switching Speed: Enables high-frequency applications, making it suitable for power supply and motor control.
7. High Reliability: Designed for robust performance in various applications.
This MOSFET is commonly used in power management circuits, inverters, and other switching applications requiring high efficiency and reliability.
Package
The 2SK3557-7-TB-E is typically packaged in a TO-220 form factor. This type of package is designed for power transistors, featuring a sturdy structure for enhanced thermal performance and ease of mounting on heatsinks.
Pinout
The 2SK3557-7-TB-E is a N-channel MOSFET transistor with a total of 8 pins. Its primary functions include switching and amplification in electronic circuits.
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET operation.
2. Drain (D) - The output where the load is connected.
3. Source (S) - The input from the power supply.
The remaining pins mainly serve for thermal and electrical management in the package.
This device is commonly used in power applications such as motor control, power supplies, and in various switching applications due to its high efficiency and fast switching capabilities. Always refer to the specific datasheet for detailed electrical characteristics and maximum ratings for safe operation.
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET operation.
2. Drain (D) - The output where the load is connected.
3. Source (S) - The input from the power supply.
The remaining pins mainly serve for thermal and electrical management in the package.
This device is commonly used in power applications such as motor control, power supplies, and in various switching applications due to its high efficiency and fast switching capabilities. Always refer to the specific datasheet for detailed electrical characteristics and maximum ratings for safe operation.
Manufacturer
The manufacturer of the 2SK3557-7-TB-E is ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components and solutions, including power management, analog, and logic devices. The company serves various industries, including automotive, industrial, communications, and consumer electronics, providing innovative technologies to support the growing demand for energy efficiency and connectivity in electronic systems. Established through the merger of several semiconductor companies, ON Semiconductor has a strong presence in the market and is known for its commitment to quality and sustainability in semiconductor production.
Application
The 2SK3557-7-TB-E is an N-channel MOSFET primarily used in power electronics applications. Its typical application areas include switching power supplies, DC-DC converters, motor drives, and other high-frequency switching applications. Its low on-resistance and high-speed switching capabilities make it suitable for efficient power management in consumer electronics, industrial equipment, and automotive systems.
Equivalent
The 2SK3557-7-TB-E is an N-channel MOSFET typically used in power applications. Equivalent products include the IRF3205, STP75NF75, and FQP50N06. Always verify specific electrical characteristics like voltage, current ratings, and package type to ensure compatibility for your application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25L3233FM1I-08Q
Macronix
-
MX25V1635FZNI
Macronix
-
MX25V1635FZNQ03
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25R3235FZNIL0
Macronix
-
MX25V16066M2I02
Macronix
-
MX25U25643GZNI00
Macronix
-
MX25R1635FZUIH0
Macronix
-
MX25U3232FZBI02
Macronix
-
MX25U6435FM2I-10G
Macronix
-
MX25L12833FZNI-10..
Macronix
-
MX29F040CTI-70G
Macronix