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2N7002A-7
MOSFET N-CH 60V 180MA SOT23
- メーカー
- Mfr。パート #2N7002A-7
- パッケージ SOT23-3
- データシート 2N7002A-7 DataSheet
- 在庫中4878
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 180mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 5V, 10V |
| RdsOn(Max)@IdVgs | 6Ohm @ 115mA, 5V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 23 pF @ 25 V |
| PowerDissipation(Max) | 370mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 |
概要
Description
The 2N7002A-7 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) widely used in electronic circuits for switching and amplification applications. With a low gate threshold voltage (typically around 2-4V), it can be easily driven by standard logic levels, making it suitable for microcontroller interfacing.
Key specifications include a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of 0.2A, and a low on-resistance (R_DS(on)) which enhances efficiency in power applications. The device operates in enhancement mode, meaning it requires a positive gate voltage relative to the source to conduct.
The compact TO-92 package facilitates easy integration into various circuit designs, and its fast switching capabilities make it ideal for applications like load switching, signal routing, and RF amplification. Overall, the 2N7002A-7 is valued for its reliability, versatility, and cost-effectiveness in electronic projects.
Key specifications include a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of 0.2A, and a low on-resistance (R_DS(on)) which enhances efficiency in power applications. The device operates in enhancement mode, meaning it requires a positive gate voltage relative to the source to conduct.
The compact TO-92 package facilitates easy integration into various circuit designs, and its fast switching capabilities make it ideal for applications like load switching, signal routing, and RF amplification. Overall, the 2N7002A-7 is valued for its reliability, versatility, and cost-effectiveness in electronic projects.
Features
The 2N7002A-7 is an N-channel MOSFET designed for low-power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various applications.
2. Current Rating: The continuous drain current (I_D) is up to 200mA, allowing for efficient switching.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.5 ohms, which helps minimize power loss during operation.
4. Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) range typically between 0.8V and 3V, enabling operation with low gate drive voltages.
5. Packaging: Available in a SOT-23 package for space-saving designs.
6. Fast Switching: The device supports high-speed switching applications, making it ideal for digital circuits and signal processing.
7. Low Input Capacitance: This contributes to faster response times and reduced power consumption.
These features make the 2N7002A-7 suitable for low-side switching, relay driving, and signal amplification in consumer electronics and industrial applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various applications.
2. Current Rating: The continuous drain current (I_D) is up to 200mA, allowing for efficient switching.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.5 ohms, which helps minimize power loss during operation.
4. Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) range typically between 0.8V and 3V, enabling operation with low gate drive voltages.
5. Packaging: Available in a SOT-23 package for space-saving designs.
6. Fast Switching: The device supports high-speed switching applications, making it ideal for digital circuits and signal processing.
7. Low Input Capacitance: This contributes to faster response times and reduced power consumption.
These features make the 2N7002A-7 suitable for low-side switching, relay driving, and signal amplification in consumer electronics and industrial applications.
Package
The 2N7002A-7 is typically packaged in a SOT-23 surface mount package. It is a small, compact package commonly used for MOSFETs, allowing for efficient space utilization on printed circuit boards.
Pinout
The 2N7002A-7 is a N-channel MOSFET commonly used in switching applications. It comes in a TO-92 package, featuring three pins.
Pin Configuration:
1. Gate (G) - This pin controls the MOSFET operation. A voltage applied here turns the device on or off.
2. Drain (D) - The current flows out of this pin when the MOSFET is on.
3. Source (S) - This pin is connected to the ground or the lower voltage side in the circuit.
Function:
The 2N7002A-7 is designed for low-power switching and amplification applications, capable of handling a maximum drain current of about 200 mA and a maximum drain-source voltage of 60 V. Its small size and efficiency make it suitable for use in digital circuits, signal processing, and low-voltage applications.
Pin Configuration:
1. Gate (G) - This pin controls the MOSFET operation. A voltage applied here turns the device on or off.
2. Drain (D) - The current flows out of this pin when the MOSFET is on.
3. Source (S) - This pin is connected to the ground or the lower voltage side in the circuit.
Function:
The 2N7002A-7 is designed for low-power switching and amplification applications, capable of handling a maximum drain current of about 200 mA and a maximum drain-source voltage of 60 V. Its small size and efficiency make it suitable for use in digital circuits, signal processing, and low-voltage applications.
Manufacturer
The 2N7002A-7 is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that designs, manufactures, and markets a wide range of products, including power management, analog, sensor, and logic devices. The company serves various industries, including automotive, industrial, communications, computing, and consumer electronics. ON Semiconductor is known for its focus on energy-efficient solutions and innovative technologies, providing essential components for modern electronic systems.
Application
The 2N7002A-7 is a N-channel MOSFET primarily used in low-power switching applications, such as signal amplification, digital circuits, and as a load switch. It is suitable for driving small motors, relays, and LEDs, as well as in power management circuits. Its fast switching speed and low on-resistance make it ideal for use in portable electronic devices, battery management systems, and signal processing applications.
Equivalent
The 2N7002A-7 is an N-channel MOSFET. Equivalent products include:
1. BS170
2. 2N7000
3. 2N7001
4. IRF510 (for higher power applications)
When selecting an equivalent, ensure voltage and current ratings match your requirements.
1. BS170
2. 2N7000
3. 2N7001
4. IRF510 (for higher power applications)
When selecting an equivalent, ensure voltage and current ratings match your requirements.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
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