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2N7002,215
MOSFET N-CH 60V 300MA TO236AB
- メーカー
- Mfr。パート #2N7002,215
- パッケージ SOT23-3
- データシート 2N7002,215 DataSheet
- 在庫中2125
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchMOS™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 300mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 5Ohm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 50 pF @ 10 V |
| PowerDissipation(Max) | 830mW (Ta) |
| OperatingTemperature | -65°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-236AB |
概要
Description
The 2N7002,215 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage and low-power applications. It is widely used in switching and amplification tasks due to its high input impedance and low on-resistance. The device can operate at a maximum drain-source voltage of 60V and a continuous drain current of up to 500mA.
Key features include a gate threshold voltage typically between 2V to 4V, making it suitable for interfacing with low-voltage logic levels. Its compact size and surface-mount package type (SOT-23) facilitate easy integration into various circuit designs, particularly in consumer electronics, power management, and automotive applications.
The 2N7002,215 is favored for its reliability, efficiency, and thermal performance, making it a popular choice among engineers for modern electronic systems.
Key features include a gate threshold voltage typically between 2V to 4V, making it suitable for interfacing with low-voltage logic levels. Its compact size and surface-mount package type (SOT-23) facilitate easy integration into various circuit designs, particularly in consumer electronics, power management, and automotive applications.
The 2N7002,215 is favored for its reliability, efficiency, and thermal performance, making it a popular choice among engineers for modern electronic systems.
Features
The 2N7002,215 is an N-channel MOSFET primarily used for low-power switching applications. Key features include:
1. Voltage Rating: It supports a drain-source voltage (V_DS) of up to 60V, making it suitable for various applications.
2. Current Rating: The continuous drain current (I_D) is typically around 0.5A at room temperature, allowing for moderate load handling.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically around 0.5Ω, which minimizes power loss during operation.
4. Fast Switching Speed: The device has a fast switching capability, making it ideal for high-frequency applications.
5. Compact Package: Available in various surface-mount and through-hole packages, facilitating easy integration into circuits.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 1-3V, making it compatible with low-voltage control signals.
7. Temperature Range: Operates effectively over a wide temperature range, enhancing its reliability in various environments.
These features make the 2N7002,215 ideal for applications such as relay drivers, low-side switching, and digital logic level interfacing.
1. Voltage Rating: It supports a drain-source voltage (V_DS) of up to 60V, making it suitable for various applications.
2. Current Rating: The continuous drain current (I_D) is typically around 0.5A at room temperature, allowing for moderate load handling.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically around 0.5Ω, which minimizes power loss during operation.
4. Fast Switching Speed: The device has a fast switching capability, making it ideal for high-frequency applications.
5. Compact Package: Available in various surface-mount and through-hole packages, facilitating easy integration into circuits.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 1-3V, making it compatible with low-voltage control signals.
7. Temperature Range: Operates effectively over a wide temperature range, enhancing its reliability in various environments.
These features make the 2N7002,215 ideal for applications such as relay drivers, low-side switching, and digital logic level interfacing.
Package
The 2N7002,215 is packaged in a SOT-23 (Surface-Mount Technology) package. This compact, lightweight design is suitable for surface-mount applications, making it ideal for space-constrained PCB layouts.
Pinout
The 2N7002,215 is an N-channel MOSFET commonly used in low-power switching applications. It typically has a 3-pin configuration. The pinout is as follows:
1. Gate (G): This pin controls the MOSFET's operation. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the output pin where the current from the load flows out.
3. Source (S): This pin is connected to the ground or negative side of the power supply.
The 2N7002 is designed for low voltage and current applications, with a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of around 200mA. This device is suitable for switching applications in digital circuits and low-power motor control.
1. Gate (G): This pin controls the MOSFET's operation. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the output pin where the current from the load flows out.
3. Source (S): This pin is connected to the ground or negative side of the power supply.
The 2N7002 is designed for low voltage and current applications, with a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of around 200mA. This device is suitable for switching applications in digital circuits and low-power motor control.
Manufacturer
The 2N7002,215 is manufactured by Texas Instruments (TI), a global semiconductor company based in the United States. Texas Instruments specializes in designing and manufacturing a wide range of electronics, including analog and embedded processing chips, microcontrollers, and various types of transistors. The company is known for its innovation in the semiconductor industry and provides solutions across various sectors, including automotive, industrial, communication, and consumer electronics. TI plays a significant role in the development of technologies that drive modern electronics, contributing to advancements in automation, connectivity, and efficiency.
Application
The 2N7002,215 is a N-channel MOSFET commonly used in low-power switching applications, such as load switching, signal switching, and amplifying signals in electronic circuits. It is suitable for use in various consumer electronics, automotive systems, and industrial automation for tasks like motor control, LED driving, and power management. Its low gate threshold voltage makes it ideal for logic-level applications.
Equivalent
The 2N7002 and 2N7002-215 are N-channel MOSFETs. Equivalent products include the BSS138, BSS84, and BS170. These alternatives may vary slightly in specifications, so always check the datasheet for voltage, current ratings, and on-resistance to ensure compatibility for your specific application.
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