画像は参照用のみです。
2ED2304S06F
Gate Drivers LEVEL SHIFT SOI
- メーカー
- Mfr。パート #2ED2304S06F
- パッケージ
- データシート 2ED2304S06F DataSheet
- 在庫中22768
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Packaging | Reel |
概要
Description
The 2ED2304S06F is a high-performance driver IC designed for controlling power MOSFETs in various applications, such as automotive, industrial, and consumer electronics. It features a dual-channel output with fast switching capabilities, making it suitable for high-frequency operations. The IC supports both high-side and low-side driving and includes built-in protection mechanisms like under-voltage lockout (UVLO) and shoot-through protection to ensure reliable performance.
With an output current capability typically around 2A, it can effectively drive large MOSFETs while maintaining low propagation delay and minimal rise and fall times. The 2ED2304S06F is also optimized for efficiency, helping to reduce power losses in switching applications. Its compact package design enables easy integration into various circuit layouts, making it a versatile choice for engineers looking to enhance the performance of their power management systems.
With an output current capability typically around 2A, it can effectively drive large MOSFETs while maintaining low propagation delay and minimal rise and fall times. The 2ED2304S06F is also optimized for efficiency, helping to reduce power losses in switching applications. Its compact package design enables easy integration into various circuit layouts, making it a versatile choice for engineers looking to enhance the performance of their power management systems.
Features
The 2ED2304S06F is a driver IC specifically designed for high-efficiency power management applications, particularly in driving MOSFETs. Key features include:
1. Dual High and Low Side Drivers: It can drive both high-side and low-side N-channel MOSFETs.
2. Bootstrap Functionality: Supports a bootstrap capacitor for high-side driving, enabling operation with a supply voltage greater than the MOSFET’s threshold.
3. Voltage Range: Operates with a wide supply voltage range, typically from 4.5V to 15V, accommodating various applications.
4. Fast Switching: Designed for high-speed switching, contributing to improved efficiency and reduced thermal management issues.
5. Integrated Level Shifting: Provides level shifting for high-side gate drive, essential for applications involving higher voltage rails.
6. Signal Input: Compatible with PWM signals, making it suitable for applications in motor control and power converters.
7. Protection Features: May include under-voltage lockout (UVLO) and thermal shutdown to enhance reliability.
This IC is widely used in DC-DC converters, motor drivers, and other power electronics applications.
1. Dual High and Low Side Drivers: It can drive both high-side and low-side N-channel MOSFETs.
2. Bootstrap Functionality: Supports a bootstrap capacitor for high-side driving, enabling operation with a supply voltage greater than the MOSFET’s threshold.
3. Voltage Range: Operates with a wide supply voltage range, typically from 4.5V to 15V, accommodating various applications.
4. Fast Switching: Designed for high-speed switching, contributing to improved efficiency and reduced thermal management issues.
5. Integrated Level Shifting: Provides level shifting for high-side gate drive, essential for applications involving higher voltage rails.
6. Signal Input: Compatible with PWM signals, making it suitable for applications in motor control and power converters.
7. Protection Features: May include under-voltage lockout (UVLO) and thermal shutdown to enhance reliability.
This IC is widely used in DC-DC converters, motor drivers, and other power electronics applications.
Package
The 2ED2304S06F is packaged in a DSO-8 (Dual Small Outline package) format. This surface-mount package is designed for efficient thermal performance and space-saving in applications involving gate drivers for power MOSFETs and IGBTs.
Pinout
The 2ED2304S06F is a dual-channel gate driver IC primarily used for driving power MOSFETs and IGBTs in various applications, including motor drives and power converters. It features a total of 8 pins.
Pin Functions:
1. IN1: Input signal for channel 1.
2. IN2: Input signal for channel 2.
3. COM: Common ground for the driver.
4. VDD: Supply voltage for the driver.
5. HO1: High-side output for channel 1.
6. HO2: High-side output for channel 2.
7. LO1: Low-side output for channel 1.
8. LO2: Low-side output for channel 2.
This IC provides features like high-speed operation, independent control for each channel, and the ability to drive high-side and low-side configurations, making it suitable for applications that require efficient control of power devices.
Pin Functions:
1. IN1: Input signal for channel 1.
2. IN2: Input signal for channel 2.
3. COM: Common ground for the driver.
4. VDD: Supply voltage for the driver.
5. HO1: High-side output for channel 1.
6. HO2: High-side output for channel 2.
7. LO1: Low-side output for channel 1.
8. LO2: Low-side output for channel 2.
This IC provides features like high-speed operation, independent control for each channel, and the ability to drive high-side and low-side configurations, making it suitable for applications that require efficient control of power devices.
Manufacturer
The 2ED2304S06F is manufactured by Infineon Technologies, a leading global semiconductor company. Infineon specializes in providing a wide range of semiconductor solutions, including power management, automotive electronics, and industrial automation. The company focuses on developing innovative technologies to enhance energy efficiency and reliability in various applications. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon operates in multiple sectors, including automotive, industrial, and consumer electronics, making it a key player in the semiconductor industry.
Application
The 2ED2304S06F is a gate driver IC designed for high-power applications. It is commonly used in motor drives, power inverters, renewable energy systems, induction heating, and industrial automation. Its capabilities facilitate efficient control of power MOSFETs and IGBTs in various configurations, enhancing performance in electric vehicles, power supplies, and other applications requiring fast switching and robust performance.
Equivalent
The 2ED2304S06F chip is a gate driver that is often used in power electronics. Equivalent products include the Texas Instruments UCC27211, Infineon IR2110, and ON Semiconductor NCP81074. Always check the specific parameters such as voltage ratings, current levels, and packaging to ensure compatibility in your application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX29F400CBTI-70G
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25V5126FM1I
Macronix
-
MX25V4035FZUI
Macronix
-
MX25R3235FZNIL0
Macronix
-
MX25V16066M2I02
Macronix
-
MX29GL512FHXFI-11..
Macronix
-
MX25L12833FM2I-10..
Macronix
-
MX25U25645GXDI00
Macronix
-
MX29F040CQI-70G
Macronix
-
MX25L25735FMI-10G
Macronix
-
MX25U51245GZ4I00
Macronix