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2ED2181S06F
- メーカー
- Mfr。パート #2ED2181S06F
- パッケージ
- データシート 2ED2181S06F DataSheet
- 在庫中2906
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仕様
| Product Type | Gate Drivers |
| Brand | Infineon Technologies |
| Subcategory | PMIC - Power Management ICs |
| Packaging | Reel |
概要
Description
The designation "2ED2181S06F" typically refers to a specific product or component, particularly in the field of electronics. It is likely a part number for an isolated gate driver used in power electronics applications. This device facilitates the control of power switches (like MOSFETs or IGBTs) by providing the necessary gate voltage while ensuring electrical isolation between the control circuit and the power circuit, enhancing safety and performance.
Key features often associated with such gate drivers include fast switching times, high-voltage isolation, and protection features like under-voltage lockout. These drivers are commonly used in applications such as motor drives, power supplies, and renewable energy systems.
For precise details regarding specifications, applications, and integration, it is advisable to consult the manufacturer’s datasheet or product documentation.
Key features often associated with such gate drivers include fast switching times, high-voltage isolation, and protection features like under-voltage lockout. These drivers are commonly used in applications such as motor drives, power supplies, and renewable energy systems.
For precise details regarding specifications, applications, and integration, it is advisable to consult the manufacturer’s datasheet or product documentation.
Features
The 2ED2181S06F is a high-speed, isolated gate driver designed for driving IGBT and MOSFET power switches. Key features include:
1. Isolation Voltage: It typically supports high isolation levels, ensuring safe operation between the control and power circuits.
2. Supply Voltage: Operates with a wide supply voltage range, enhancing compatibility with various power applications.
3. High Drive Current: Capable of providing high peak output currents (up to 4A), enabling fast switching and improving overall efficiency.
4. Propagation Delay: Offers low propagation delay, which is critical for maintaining high switching frequencies.
5. Integrated Bootstrap Circuitry: Facilitates high-side driver applications without the need for additional components.
6. Temperature Range: Designed to operate over a broad temperature range, ensuring reliability in diverse environments.
7. Integrated Protection Features: Includes under-voltage lockout (UVLO) and fault protection mechanisms to enhance safety.
These features make the 2ED2181S06F suitable for applications in inverters, motor drives, and power converters.
1. Isolation Voltage: It typically supports high isolation levels, ensuring safe operation between the control and power circuits.
2. Supply Voltage: Operates with a wide supply voltage range, enhancing compatibility with various power applications.
3. High Drive Current: Capable of providing high peak output currents (up to 4A), enabling fast switching and improving overall efficiency.
4. Propagation Delay: Offers low propagation delay, which is critical for maintaining high switching frequencies.
5. Integrated Bootstrap Circuitry: Facilitates high-side driver applications without the need for additional components.
6. Temperature Range: Designed to operate over a broad temperature range, ensuring reliability in diverse environments.
7. Integrated Protection Features: Includes under-voltage lockout (UVLO) and fault protection mechanisms to enhance safety.
These features make the 2ED2181S06F suitable for applications in inverters, motor drives, and power converters.
Package
The 2ED2181S06F is packaged in a DSO-14 (Dual Small Outline) package, which is designed for surface mounting and is suitable for applications requiring efficient thermal performance and compact design.
Pinout
The 2ED2181S06F is a high-speed gate driver typically used for driving power MOSFETs and IGBTs in various applications. It features a total of 8 pins.
Pin Count and Functions:
1. VCC - Supply voltage for the driver.
2. COM - Common ground for the IC and the load.
3. IN - Input signal; used to control the gate driver.
4. OUT - Output to drive the gate of the MOSFET/IGBT.
5. VS - Source voltage for the high-side driver; connects to the source of the high-side MOSFET.
6. HO - High-side output; drives the gate of the high-side MOSFET.
7. LO - Low-side output; drives the gate of the low-side MOSFET.
8. VB - Bootstrap voltage; used to supply the high-side driver.
This driver supports fast switching, making it ideal for applications such as motor drives and power converters.
Pin Count and Functions:
1. VCC - Supply voltage for the driver.
2. COM - Common ground for the IC and the load.
3. IN - Input signal; used to control the gate driver.
4. OUT - Output to drive the gate of the MOSFET/IGBT.
5. VS - Source voltage for the high-side driver; connects to the source of the high-side MOSFET.
6. HO - High-side output; drives the gate of the high-side MOSFET.
7. LO - Low-side output; drives the gate of the low-side MOSFET.
8. VB - Bootstrap voltage; used to supply the high-side driver.
This driver supports fast switching, making it ideal for applications such as motor drives and power converters.
Manufacturer
The 2ED2181S06F is manufactured by Texas Instruments (TI), a global semiconductor company based in the United States. Texas Instruments designs and produces a wide range of electronic components, including analog and digital chips, microcontrollers, and embedded processors. The company is well-known for its innovations in various sectors, including automotive, industrial, and consumer electronics. TI focuses on providing high-performance solutions for signal processing and power management, making it a key player in the electronics industry.
Application
The 2ED2181S06F is a gate driver IC primarily used in power electronics applications. Common application areas include industrial motor drives, renewable energy systems (like solar inverters), electric vehicles, and high-efficiency power supplies. Its ability to drive large MOSFETs and IGBTs makes it suitable for switching power converters and energy management systems.
Equivalent
The 2ED2181S06F chip is a gate driver used for driving power MOSFETs and IGBTs. Equivalent products include the TI UCC27524, ON Semiconductor NCP81074, and Microchip MCP14E. Always check the specifications to ensure compatibility in voltage, current, and switching speed for your specific application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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