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1SD280PT2F55E1VG

Name: 1SD280PT2F55E1VG
Rating: 4.7 (12 reviews)

IC FPGA 816 I/O 2912FBGA

メーカー
Mfr。パート #1SD280PT2F55E1VG
パッケージ 2912-BBGA, FCBGA
データシート
在庫中4068

+BOM RFQについて

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

RFQおよびもっと割引を得る

仕様

Package	Tray
Series	Stratix® 10 DX
ProductStatus	Active
NumberofLogicElements/Cells	2753000
TotalRAMBits	240123904
NumberofI/O	816
MountingType	Surface Mount
OperatingTemperature	0°C ~ 100°C (TJ)
Package/Case	2912-BBGA, FCBGA

概要

Description

The 1SD280PT2F55E1VG is a semiconductor device, specifically a Schottky barrier rectifier. It is designed for applications that require efficient rectification with low forward voltage drop and fast switching speeds. This component is commonly used in power supply circuits, DC-DC converters, and other electronic systems where minimizing power loss is essential.
Key characteristics include a high current rating, low reverse leakage current, and a sturdy package design for improved thermal performance. The "SD" series designation often indicates it operates in a wide temperature range, making it suitable for various industrial applications.
In summary, the 1SD280PT2F55E1VG is a reliable choice for engineers looking for efficient and robust rectification solutions in electronic circuits.

Features

The 1SD280PT2F55E1VG is a high-performance N-channel MOSFET designed for various applications. Key features include:
1. Voltage Rating: It has a high breakdown voltage, typically around 55V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling significant continuous drain currents, often exceeding 30A, depending on thermal management.
3. Low On-Resistance: Low R_DS(on) values reduce conduction losses, enhancing efficiency, particularly in power supply and motor control applications.
4. Fast Switching Speed: Optimized for quick switching, it supports high-frequency operations, improving overall system performance.
5. Package Type: Available in a compact surface-mount package, facilitating space-saving designs and thermal management.
6. Temperature Range: Operates over a wide temperature range, making it versatile for various environments.
These features make the 1SD280PT2F55E1VG suitable for applications in power electronics, automotive systems, and industrial control.

Package

The 1SD280PT2F55E1VG is packaged in a TO-220 format. This package type is commonly used for power transistors, providing effective heat dissipation and ease of mounting on heat sinks.

Pinout

The 1SD280PT2F55E1VG is a power transistor, specifically a silicon NPN transistor, used for switching and amplification purposes in electronic circuits. It typically features a TO-220 package, which includes 3 pins.
The pin functions are as follows:
1. Collector (C): This is the pin through which the output current flows; it connects to the load.
2. Base (B): This pin controls the transistor's operation; applying a voltage here allows current to flow from the collector to the emitter.
3. Emitter (E): This pin allows the current to exit the transistor; it connects to the ground or the negative side of the circuit.
The 1SD280PT2F55E1VG is suitable for use in power applications such as audio amplifier outputs, motor drivers, and other high-current applications.

Manufacturer

The manufacturer of the 1SD280PT2F55E1VG is ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components, including power management, analog, and mixed-signal devices. The company serves various industries, including automotive, industrial, and consumer electronics, providing solutions that enhance energy efficiency and performance in electronic systems. Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor has grown through strategic acquisitions and innovation, positioning itself as a key player in the semiconductor market.

Application

The 1SD280PT2F55E1VG is a high-voltage transistor primarily used in power switching applications, such as in power supplies, motor control, and automotive electronics. It is suitable for use in amplifiers, voltage regulation circuits, and signal processing due to its high efficiency and reliability. Additionally, it can be utilized in RF applications and various electronic devices requiring robust performance under high load conditions.

Equivalent

The 1SD280PT2F55E1VG is a silicon NPN transistor. Equivalent products include the 2SD280, MPSU06, and BC547. Ensure compatibility by checking specifications such as voltage, current ratings, and package type before substitution.