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1ED44175N01B
- メーカー
- Mfr。パート #1ED44175N01B
- パッケージ
- データシート 1ED44175N01B DataSheet
- 在庫中12304
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仕様
| Manufacturer | Infineon Technologies |
| Package | SOT-23-6 |
| Voltage - Supply | 12.7V~20V |
| Load Type | IGBT |
| Fall Time | 5ns |
| Current - Output Low(IOL) | 2.6A |
| Current - Output High(IOH) | 2.6A |
概要
Description
The 1ED44175N01B is a high-speed isolated gate driver designed for driving power MOSFETs and IGBTs in various applications, including industrial, automotive, and renewable energy systems. It features a compact package, typically in a dual-in-line configuration, allowing for easy integration into circuit designs. The device provides electrical isolation between the control signal and the power switch, enhancing safety and performance.
Key specifications include a wide input voltage range, fast switching times, and robust output drive capabilities. The 1ED44175N01B is particularly noted for its low propagation delay, which is essential for efficient switching and reduced losses in power applications. It also may include features like fault feedback and under-voltage lockout for added protection.
Overall, the 1ED44175N01B is suitable for various demanding applications, enabling efficient control of power electronics while ensuring reliability and safety.
Key specifications include a wide input voltage range, fast switching times, and robust output drive capabilities. The 1ED44175N01B is particularly noted for its low propagation delay, which is essential for efficient switching and reduced losses in power applications. It also may include features like fault feedback and under-voltage lockout for added protection.
Overall, the 1ED44175N01B is suitable for various demanding applications, enabling efficient control of power electronics while ensuring reliability and safety.
Features
The 1ED44175N01B is an isolated gate driver manufactured by Infineon Technologies. It is designed for driving high and low-side MOSFETs and IGBTs in power electronics applications. Key features include:
1. Isolation: Provides galvanic isolation between the input and output, enhancing safety and reliability in high-voltage applications.
2. High Voltage Rating: Supports up to 1000V, making it suitable for demanding power applications.
3. High Drive Current: Capable of delivering up to 3A peak output current, allowing for fast switching and reduced switching losses.
4. Integrated Protection: Offers features like under-voltage lockout (UVLO) and thermal shutdown to protect the device and the system.
5. Wide Operating Temperature Range: Designed for operation from -40°C to +125°C, suitable for various industrial environments.
6. Compact Package: Available in a small footprint, facilitating easy integration into power modules.
These features make the 1ED44175N01B ideal for applications such as inverters, converters, and motor drives.
1. Isolation: Provides galvanic isolation between the input and output, enhancing safety and reliability in high-voltage applications.
2. High Voltage Rating: Supports up to 1000V, making it suitable for demanding power applications.
3. High Drive Current: Capable of delivering up to 3A peak output current, allowing for fast switching and reduced switching losses.
4. Integrated Protection: Offers features like under-voltage lockout (UVLO) and thermal shutdown to protect the device and the system.
5. Wide Operating Temperature Range: Designed for operation from -40°C to +125°C, suitable for various industrial environments.
6. Compact Package: Available in a small footprint, facilitating easy integration into power modules.
These features make the 1ED44175N01B ideal for applications such as inverters, converters, and motor drives.
Package
The 1ED44175N01B is packaged in a DSO-8 (8-pin Dual Small Outline) package type.
Pinout
The 1ED44175N01B is a single-channel gate driver with a pin count of 8. Its primary functions include driving N-channel MOSFETs and IGBTs, providing fast switching capabilities, and ensuring efficient operation in power management applications.
The pin configuration is as follows:
1. VCC - Supply voltage for the driver.
2. GND - Ground reference.
3. IN - Input signal to control the output state.
4. OUT - Output to the gate of the power transistor.
5. VS - Source of the power transistor, used for bootstrap operation.
6. VB - Bootstrap voltage supply for high-side gate driving.
7. NC - No Connect (not internally connected).
8. COM - Common connection for the low-side driver.
The device supports both low-side and high-side driving with a high-speed output capability, making it suitable for applications such as motor control, power supplies, and DC-DC converters.
The pin configuration is as follows:
1. VCC - Supply voltage for the driver.
2. GND - Ground reference.
3. IN - Input signal to control the output state.
4. OUT - Output to the gate of the power transistor.
5. VS - Source of the power transistor, used for bootstrap operation.
6. VB - Bootstrap voltage supply for high-side gate driving.
7. NC - No Connect (not internally connected).
8. COM - Common connection for the low-side driver.
The device supports both low-side and high-side driving with a high-speed output capability, making it suitable for applications such as motor control, power supplies, and DC-DC converters.
Manufacturer
The 1ED44175N01B is manufactured by Infineon Technologies, a leading semiconductor company based in Germany. Infineon specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, sensor technologies, automotive electronics, and security solutions. The company caters to various sectors such as automotive, industrial, and consumer electronics, focusing on innovations that enhance energy efficiency and reliability. Infineon is recognized for its commitment to advancing technology and sustainability in the semiconductor industry.
Application
The 1ED44175N01B is a high-speed gate driver designed for driving power MOSFETs and IGBTs. Its application areas include power supply systems, motor drives, renewable energy systems (like solar inverters), and industrial automation. It is suitable for applications requiring efficient switching and control in high-frequency operations, enhancing performance in energy conversion and management systems.
Equivalent
The 1ED44175N01B is a high-speed driver for IGBTs and MOSFETs. Equivalent products include the following drivers: TC4420, TC4427, MIC4426, MAX4420, and LTC7000. Ensure to check specifications such as voltage, current, and rise/fall times for compatibility with your application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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